SIR412DP datasheet(3/13 Pages) VISHAY

3 / 13 page

Document Number: 65364

S09-2029-Rev. A, 05-Oct-09

www.vishay.com

Vishay Siliconix

SiR412DP

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0.0

0.5

1.0

1.5

2.0

2.5

VDS - Drain-to-Source Voltage (V)

VGS =10 V thru 4 V

VGS =3 V

0.008

0.010

0.012

0.014

0.016

10203040

ID - Drain Current (A)

VGS =4.5 V

VGS =10 V

0.0

2.2

4.4

6.6

8.8

11.0

ID =10A

Qg - Total Gate Charge (nC)

VDS =15 V

VDS =10 V

VDS =5 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

VGS - Gate-to-Source Voltage (V)

TC = 25 °C

TC = 125 °C

TC =- 55 °C

Crss

150

300

450

600

750

Ciss

VDS - Drain-to-Source Voltage (V)

Coss

0.5

0.8

1.1

1.4

1.7

2.0

- 50

- 25

100

125

150

TJ - Junction Temperature (°C)

VGS =4.5 V

ID =10A

VGS =10 V

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