CSD25302Q2 datasheet(4/9 Pages) TI

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−VDS − Drain to Source Voltage − V

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0.0

0.2

0.4

0.6

0.8

1.0

G001

VGS = −4.5V

VGS = −2.5V

VGS = −3.5V

VGS = −1.8V

VGS = −2V

−VGS − Gate to Source Voltage − V

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0.5

0.7

0.9

1.1

1.3

1.5

G002

VDS = −5V

TC = −55°C

TC = 25°C

TC = 125°C

Qg − GateCharge − nC

0.0

0.5

1.0

1.5

2.0

2.5

3.0

G003

ID = −3A

VDS = −10V

−VDS − Drain to Source Voltage − V

0.0

0.1

0.2

0.3

0.4

G004

f = 1MHz

VGS = 0V

CRSS = CGD

COSS = CDS + CGD

CISS = CGD + CGS

TC − Case Temperature − °C

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

−75

−25

125

175

G005

ID = −250µA

−VGS − Gate to Source Voltage − V

100

125

150

G006

ID = −3A

TC = 125°C

TC = 25°C

CSD25302Q2

SLPS234A – NOVEMBER 2009 – REVISED OCTOBER 2010

www.ti.com

TYPICAL MOSFET CHARACTERISTICS (continued)

TA = 25°C, unless otherwise specified

Figure 2. Saturation Characteristics

Figure 3. Transfer Characteristics

Figure 4. Gate Charge

Figure 5. Capacitance

Figure 6. Threshold Voltage vs. Temperature

Figure 7. On-State Resistance vs. Gate to Source Voltage

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