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BC337 Datasheet(PDF) 3 Page - Siemens Semiconductor Group

Part # BC337
Description  NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage)
PDF  6 Pages
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BC337 Datasheet(HTML) 3 Page - Siemens Semiconductor Group

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Semiconductor Group
3
BC 337
BC 338
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
–
DC current gain1)
IC = 100 mA; VCE = 1 V
BC 337/16; BC 338/16
BC 337/25; BC 338/25
BC 337/40; BC 338/40
IC = 300 mA; VCE = 1 V
BC 337/16; BC 338/16
BC 337/25; BC 338/25
BC 337/40; BC 338/40
hFE
100
160
250
60
100
170
160
250
350
–
–
–
250
400
630
–
–
–
V
Collector-emitter breakdown voltage
IC = 10 mA
BC 337
BC 338
V(BR)CE0
45
25
–
–
–
–
nA
nA
µA
µA
Collector cutoff current
VCB = 25 V
BC 338
VCB = 45 V
BC 337
VCB = 25 V, TA = 150 ˚C
BC 338
VCB = 45 V, TA = 150 ˚C
BC 337
ICB0
–
–
–
–
–
–
–
–
100
100
10
10
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Collector-base breakdown voltage
IC = 100
µA
BC 337
BC 338
V(BR)CB0
50
30
–
–
–
–
Emitter-base breakdown voltage
IE = 10
µA
V(BR)EB0
5––
V
Collector-emitter saturation voltage1)
IC = 500 mA; IB = 50 mA
VCEsat
–
–
0.7
Base-emitter saturation voltage
IC = 500 mA; IB = 50 mA
VBEsat
––2
nA
Emitter cutoff current
VEB = 4 V
IEB0
–
–
100
1)
Pulse test: t
≤ 300 µs, D ≤ 2%.



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