Document Number: 89177

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Revision: 09-Dec-09

1

Trench MOS Barrier Schottky Rectifier

VT10200C, VFT10200C, VBT10200C, VIT10200C

Vishay General Semiconductor

New Product

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

• Solder dip 275 °C max. 10 s, per JESD 22-B106 (for

TO-220AB, ITO-220AB and TO-262AA package)

• Compliant

to

RoHS

directive

2002/95/EC

and

in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, dc-to-dc

converters and reverse battery protection.

MECHANICAL DATA

Case:

TO-220AB, ITO-220AB, TO-263AB and TO-262AA

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity:

As marked

Mounting Torque:

10 in-lbs maximum

PRIMARY CHARACTERISTICS

2 x 5.0 A

200 V

80 A

0.65 V

150 °C

1

2

3

1

K

2

3

1

2

K

PIN 1

PIN 2

PIN 3

K

PIN 1

PIN 2

K

HEATSINK

PIN 1

PIN 2

PIN 3

PIN 1

PIN 2

CASE

PIN 3

1

2

3

TO-220AB

TO-263AB

TO-262AA

ITO-220AB

VT10200C

VFT10200C

VIT10200C

VBT10200C

TMBS

®

PARAMETER

SYMBOL

VT10200C

VFT10200C

VBT10200C

VIT10200C

UNIT

Maximum repetitive peak reverse voltage

200

V

Maximum average forward rectified current

(fig. 1)

per device

10.0

A

per diode

5.0

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

80

A

Non-repetitive avalanche energy

30

mJ

Peak repetitive reverse current

0.5

A

dV/dt

10 000

V/μs

Isolation voltage (ITO-220AB only)

from terminal to heatsink t = 1 min

1500

V

Operating junction and storage temperature range

- 40 to + 150

°C