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VT10200C Datasheet(PDF) 2 Page - Vishay Siliconix |
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VT10200C Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 5 page ![]() www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 89177 2 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 09-Dec-09 VT10200C, VFT10200C, VBT10200C, VIT10200C Vishay General Semiconductor New Product Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Device ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage IR = 1.0 mA TA = 25 °C VBR 200 (minimum) - V Instantaneous forward voltage per diode IF = 2.5 A TA = 25 °C VF (1) 0.81 - V IF = 5.0 A 1.10 1.60 IF = 2.5 A TA = 125 °C 0.58 - IF = 5.0 A 0.65 0.73 Reverse current per diode VR = 180 V TA = 25 °C IR (2) 1.7 - μA TA = 125 °C 1.8 - mA VR = 200 V TA = 25 °C - 150 μA TA = 125 °C 2.5 10 mA THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VT10200C VFT10200C VBT10200C VIT10200C UNIT Typical thermal resistance per diode RθJC 3.5 7.0 3.5 3.5 °C/W per device 2.5 5.5 2.5 2.5 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB VT10200C-E3/4W 1.88 4W 50/tube Tube ITO-220AB VFT10200C-E3/4W 1.72 4W 50/tube Tube TO-263AB VBT10200C-E3/4W 1.37 4W 50/tube Tube TO-263AB VBT10200C-E3/8W 1.37 8W 800/reel Tape and reel TO-262AA VIT10200C-E3/4W 1.44 4W 50/tube Tube Case Temperature (°C) 12 4 0 25 50 75 100 125 VFT10200C Mounted on Specific Heatsink 2 10 8 6 0 150 V(B,I)T10200C Resistive or Inductive Load 0 2 4 7 10 011 Average Forward Current (A) 3 5 9 9 7 5 3 1 1 10 8 6 4 2 6 8 D = t p/T t p T D = 0.1 D = 0.2 D = 0.3 D = 0.5 D = 0.8 D = 1.0 |
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