BCX13 datasheet(2/4 Pages) SIEMENS

Part #	BCX13

Description	PNP Silicon AF Switching Transistor (For general AF applications High breakdown voltage)

PDF	4 Pages

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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2 / 4 page

Semiconductor Group

BCX 13

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC characteristics for transistor T1

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0

V(BR)CE0

125

–

Collector-base breakdown voltage

IC = 100

µA, IB = 0

V(BR)CB0

125

–

Emitter-base breakdown voltage

IE = 10

µA, IC = 0

V(BR)EBS

5––

µA

Collector-base cutoff current

VCB = 100 V, IE = 0

VCB = 100 V, IE = 0, TA = 150 ˚C

ICB0

–

100

Emitter cutoff current

VEB = 4 V

IEB0

–

100

–

DC current gain1)

IC = 1 mA,VCE = 1 V

IC = 10 mA,VCE = 1 V

IC = 100 mA,VCE = 1 V

IC = 200 mA,VCE = 1 V

hFE

–

Collector-emitter saturation voltage1)

IC = 500 mA, IB = 50 mA

VCEsat

–

1.0

Base-emitter saturation voltage1)

IC = 500 mA, IB = 50 mA

VBEsat

–

1.6

MHz

Transition frequency

IC = 20 mA, VCE = 5 V, f = 20 MHz

–

120

–

Output capacitance

VCB = 10 V, f = 1 MHz

Cobo

–12

–

AC characteristics

Pulse test:

≤ 300 µs, D ≤ 2 %.

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