BDP950 datasheet(1/4 Pages) SIEMENS

Part #	BDP950

Description	PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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Semiconductor Group

1

Nov-28-1996

BDP 948

PNP Silicon AF Power Transistor

• For AF drivers and output stages

• High collector current

• High current gain

• Low collector-emitter saturation voltage

• Complementary type: BDP947, BDP949 (NPN)

Type

Marking Ordering Code

Pin Configuration

Package

BDP 948

BDP 948 Q62702-D1336

1 = B

2 = C

3 = E

4 = C

SOT-223

BDP 950

BDP 950 Q62702-D1338

1 = B

2 = C

3 = E

4 = C

SOT-223

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

BDP 948

BDP 950

VCEO

60

45

V

Collector-base voltage

BDP 948

BDP 950

VCBO

60

45

Emitter-base voltage

VEBO

5

DC collector current

IC

3

A

Peak collector current

ICM

5

Base current

IB

200

mA

Peak base current

IBM

500

Total power dissipation,

TS = 99°C

Ptot

3

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

- 65 ... + 150

Thermal Resistance

Junction ambient

1)

RthJA

≤ 42

K/W

Junction - soldering point

RthJS

≤ 17

1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu

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BDP950 Datasheet(PDF) 1 Page - Siemens Semiconductor Group

BDP950 Datasheet(HTML) 1 Page - Siemens Semiconductor Group

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