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BF2000 Datasheet(PDF) 3 Page - Siemens Semiconductor Group |
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BF2000 Datasheet(HTML) 3 Page - Siemens Semiconductor Group |
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3 / 3 page ![]() BF 2000 Semiconductor Group Au -03-1998 3 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC characteristics Forward transconductance VDS = 5 V, ID = 10 mA, VG2S = 4 V, f = 1 kHz gfs - 24 - mS Gate 1 input capacitance VDS = 5 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz Cg1ss - 1.2 - pF Gate 2 input capacitance VDS = 5 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz Cg2ss - - - Feedback capacitance VDS = 8 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz Cdg1 - 25 - fF Output capacitance VDS = 5 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz Cdss - 0.8 - pF Power gain VDS = 5 V, ID = 10 mA, VG2S = 4 V, f = 45 MHz Gps 28 29 - dB Power gain VDS = 5 V, ID = 10 mA, VG2S = 4 V, f = 800 MHz Gps - 22 - Noise figure VDS = 5 V, ID = 10 mA, VG2S = 4 V, f = 45 MHz F - 1.1 - Noise figure VDS = 5 V, ID = 10 mA, VG2S = 4 V, f = 800 MHz F - 1 - Gain control range VDS = 8 V, VG2S = 4 ... -2V, f = 800 MHz ∆G ps 40 - - Semiconductor Group 3 1998-11-01 |
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