BFP22 datasheet(2/4 Pages) SIEMENS

Part #	BFP22

Description	NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage)

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

Logo

2 / 4 page

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Collector-emitter saturation voltage1)

IC = 20 mA, IB = 2 mA

BFP 22

BFP 25

VCEsat

–

0.4

0.5

Base-emitter saturation voltage1)

IC = 20 A, IB = 2 mA

VBEsat

–

0.9

MHz

Transition frequency

IC = 20 mA, VCE = 10 V, f = 20 MHz

–70

–

AC characteristics

Collector-emitter breakdown voltage

IC = 1 mA

BFP 22

BFP 25

V(BR)CE0

200

300

–

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC characteristics

Collector-base breakdown voltage

IC = 100

µA

BFP 22

BFP 25

V(BR)CB0

200

300

–

Emitter-base breakdown voltage

IE = 100

µA

V(BR)EB0

6––

Emitter-base cutoff current

VEB = 4 V

IEB0

–

100

µA

Collector-base cutoff current

VCB = 160 V

BFP 22

VCB = 250 V

BFP 25

VCB = 160 V, TA = 150 ˚C

BFP 22

VCB = 250 V, TA = 150 ˚C

BFP 25

ICB0

–

100

–

DC current gain

IC = 1 mA, VCE = 10 V

IC = 10 mA, VCE = 10 V1)

IC = 30 mA, VCE = 10 V1)

BFP 22

BFP 25

hFE

–

Output capacitance

VCB = 30 V, f = 1 MHz

Cobo

–

1.5

–

Pulse test conditions: t

≤ 300 µs, D ≤ 2%.

BFP 22

BFP 25

BFP22 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

BFP22 Datasheet(HTML) 2 Page - Siemens Semiconductor Group

Html Pages

1 2 3 4

Datasheet Download

Link URL