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FDN338P Datasheet(PDF) 4 Page - Shenzhen Jin Yu Semiconductor Co., Ltd. |
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FDN338P Datasheet(HTML) 4 Page - Shenzhen Jin Yu Semiconductor Co., Ltd. |
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4 / 4 page ![]() 0.01 0.10 1.00 10.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -0.2 -0.1 0.0 0.1 0.2 0.3 0.4 -50 0 50 100 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 02468 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) 2 1 0.1 0.01 10-4 10-3 10-2 10-1 1 30 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) TJ - Temperature (_C) Time (sec) 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 ID = 2.8 A ID = 250 mA 10 1 10 TC = 25_C Single Pulse 14 12 8 4 0 TJ = 25_C TJ = 150_C 2 6 10 20V P-Channel Enhancement Mode MOSFET 4 Date:2011/05 www.htsemi.com semiconductor JinYu FDN338P |
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