SST3585 datasheet(1/7 Pages) SECOS

Part #	SST3585

Description	3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET

PDF	7 Pages

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Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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Elektronische Bauelemente

SST3585

3.5A, 20V, RDS(ON) 75m

-2.5A, -20V, RDS(ON) 160m

N And P-Channel Enhancement Mode Power MOSFET

03-Jan-2012 Rev. G

Page 1 of 7

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

3 5 8 5

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= Date Code

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RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

The SST3585 provide the designer with best combination

of fast switching, low on-resistance and cost effectiveness.

The SOT-26 package is universally used for all

commercial-industrial surface mount applications.

FEATURES



Low Gate Charge



Low On-resistance

MARKING CODE

PACKAGE INFORMATION

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

Ratings

Parameter

Symbol

N-Channel

P-Channel

Unit

Drain-Source Voltage

VDS

20

-20

V

Gate-Source Voltage

VGS

±

12

±

12

V

TA = 25°C

3.5

-2.5

Continuous Drain Current

3

TA = 70°C

ID

2.8

-1.97

A

Pulsed Drain Current

1

IDM

10

-10

A

Power Dissipation

PD

1.14

W

Maximum Junction to Ambient

3

RθJA

110

°C / W

Linear Derating Factor

0.01

W / °C

Operating Junction & Storage Temperature Range

TJ, TSTG

-55~150

°C

Package

MPQ

Leader Size

SOT-26

3K

7 inch

SOT-26

A

H

E

F

L

G

J

K

C

D

B

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

2.70

3.10

G

0.37 REF.

B

2.60

3.00

H

0.30

0.55

C

1.20 REF.

J

-

D

1.40

1.80

K

0.12 REF.

E

0.95 REF.

L

-

0.10

F

0.60 REF.

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SST3585 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

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