SST3585 datasheet(3/7 Pages) SECOS

Part #	SST3585

Description	3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET

PDF	7 Pages

Scroll/Zoom	100%

Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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Elektronische Bauelemente

SST3585

3.5A, 20V, RDS(ON) 75m

-2.5A, -20V, RDS(ON) 160m

N And P-Channel Enhancement Mode Power MOSFET

03-Jan-2012 Rev. G

Page 3 of 7

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Source-Drain Diode

N-Ch

1.2

IS=1.2A, VGS=0

Forward On Voltage

P-Ch

VSD

-1.2

IS= -1.2A, VGS=0

N-Ch

IS=3A, VGS=0 ,dI/dt=100A/μs

Reverse Recovery Time

P-Ch

TRR

IS= -2A, VGS=0 ,dI/dt=100A/μs

N-Ch

IS=3A, VGS=0 ,dI/dt=100A/μs

Reverse Recovery Charge

P-Ch

Qrr

IS= -2A, VGS=0 ,dI/dt=100A/μs

Notes:

Pulse width limited by Max. junction temperature.

Pulse width≦300μs, duty cycle≦2%.

Surface mounted on 1 in

2 copper pad of FR4 board; t≦5 sec. 180°C/W when mounted on min. copper pad.

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