STT3458N datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

STT3458N

3.4A , 60V , RDS(ON) 92 m

N-Channel Enhancement Mode Mos.FET

05-Mar-2012 Rev. B

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Gate-Threshold Voltage

VGS(th)

VDS=VGS, ID=250μA

Gate-Body Leakage

IGSS

±100

VDS=0, VGS= ±20V

VDS=48V, VGS=0

Zero Gate Voltage Drain Current

IDSS

μA

VDS=48V, VGS=0, TJ= 55°C

On-State Drain Current

ID(on)

VDS =5V, VGS=10V

VGS=10V, ID=3.4A

Drain-Source On-Resistance

RDS(ON)

107

mΩ

VGS=4.5V, ID=3.1A

Forward Transconductance

gfs

VDS=4.5V, ID=3.4A

Diode Forward Voltage

VSD

1.1

IS=1.7A, VGS=0

Dynamic

Total Gate Charge

3.6

Gate-Source Charge

Qgs

1.8

Gate-Drain Charge

Qgd

1.3

VDS=30V,

VGS=5V,

ID=3.4A

Turn-on Delay Time

Td(on)

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

VDD=30V,

VGEN=10V,

RL=30Ω,

ID=1A

Notes

1. Pulse test：PW≦300μs duty cycle≦2%.

2. Guaranteed by design, not subject to production testing.

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