BSP149 datasheet(1/7 Pages) SIEMENS

Part #	BSP149

Description	SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)

PDF	7 Pages

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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1 / 7 page

Semiconductor Group

1

09.96

Type

Ordering

Code

Tape and Reel Information Pin Configuration Marking Package

1234

BSP 149 Q67000-S071 E6327: 1000 pcs/reel

G

D

S

D

BSP 149 SOT-223

Maximum Ratings

Parameter

Symbol

Values

Unit

Drain-source voltage

V

DS

200

V

Drain-gate voltage,

R

GS = 20 kΩ

V

DGR

200

Gate-source voltage

V

GS

± 14

Gate-source peak voltage, aperiodic

V

gs

± 20

Continuous drain current,

T

A = 28 ˚C

I

D

0.48

A

Pulsed drain current,

T

A = 25 ˚C

I

D puls

1.44

Max. power dissipation,

T

A = 25 ˚C

P

tot

1.8

W

Operating and storage temperature range

T

j, Tstg

– 55 … + 150

˚C

Thermal resistance 1)

chip-ambient

chip-soldering point

R

thJA

R

thJS

70

10

K/W

DIN humidity category, DIN 40 040

–

E

–

IEC climatic category, DIN IEC 68-1

–

55/150/56

1)

Transistor on epoxy pcb 40 mm

× 40 mm × 1.5 mm with 6 cm2 copper area for drain connection.

SIPMOS® Small-Signal Transistor

BSP 149

q

V

DS

200 V

q

I

D

0.48 A

q

R

DS(on) 3.5 Ω

q

N channel

q

Depletion mode

q

High dynamic resistance

q

Available grouped in

V

GS(th)

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BSP149 Datasheet(PDF) 1 Page - Siemens Semiconductor Group

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