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BSP170P Datasheet(PDF) 8 Page - Siemens Semiconductor Group |
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BSP170P Datasheet(HTML) 8 Page - Siemens Semiconductor Group |
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8 / 9 page ![]() Semiconductor Group 07 / 1998 8 BSP 170 P Preliminary data Typ. gate charge VGS = f (QGate) parameter: ID puls =-1.9A 0 2 4 6 8 10 nC 14 QGate 0 2 4 6 8 10 12 V 16 BSP 170 P VGS DS max V 0,8 DS max V 0,2 Avalanche Energy EAS = f (Tj) parameter: ID = -1.9 A,VDD = -25 V RGS = 25 Ω 20 40 60 80 100 120 °C 150 Tj 0 5 10 15 20 25 30 35 40 45 50 55 60 mJ 70 EAS Drain-source breakdown voltage V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 160 Tj 54 56 58 60 62 64 66 68 V 71 BSP 170 P V(BR)DSS |
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