BSP170P datasheet(2/9 Pages) SIEMENS

Part #	BSP170P

Description	SIPMOS Power Transistor (P-Channel Enhancement mode Avalanche rated dv/dt rated)

PDF	9 Pages

Scroll/Zoom	100%

Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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2 / 9 page

Semiconductor Group

07 / 1998

BSP 170 P

Preliminary data

Electrical Characteristics

Parameter

Values

Symbol

Unit

at Tj = 25 °C, unless otherwise specified

typ.

max.

min.

Thermal Characteristics

tbd

RthJS

Thermal resistance, junction -soldering point (Pin 4 )

K/W

tbd

RthJA

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area1)

Static Characteristics

V(BR)DSS

Drain- source breakdown voltage

VGS = 0 V, ID = -0.25 mA

VGS(th)

-2.1

-4

-3

Gate threshold voltage, VGS = VDS

ID = -460 µA

IDSS

-1

-100

µA

-0.1

Zero gate voltage drain current

VDS = -60 V, VGS = 0 V, Tj = 25 °C

VDS = -60 V, VGS = 0 V, Tj = 125 °C

IGSS

-10

Gate-source leakage current

VGS = -20 V, VDS = 0 V

-100

RDS(on)

0.175

0.3

Ω

Drain-Source on-state resistance

VGS = -10 V, ID = -1.9 A

1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain

connection. PCB is vertical without blown air.

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