BSP52 datasheet(2/5 Pages) SIEMENS

Part #	BSP52

Description	NPN Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage)

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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2 / 5 page

Semiconductor Group

BSP 50

… BSP 52

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

DC current gain2)

IC = 150 mA, VCE = 10 V

IC = 500 mA, VCE = 10 V

Collector-emitter breakdown voltage1)

IC = 10 mA

BSP 50

BSP 51

BSP 52

V(BR)CER

–

µA

Collector-emitter cutoff current

VCE = VCERmax, VBE = 0

ICES

––10

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC characteristics

Emitter-base breakdown voltage

IE = 100

µA, IB = 0

V(BR)EB0

5––

Collector-emitter saturation voltage2)

IC = 500 mA, IB = 0.5 mA

IC = 1 A, IB = 1 mA

VCEsat

–

1.3

1.8

–

hFE

1000

2000

–

MHz

Transition frequency

IC = 100 mA, VCE = 5 V, f = 100 MHz

–

200

–

AC characteristics

Switching times

IC = 500 mA, IB1 = IB2 = 0.5 mA

(see diagrams)

ton

toff

–

400

1500

–

Collector-base breakdown voltage

IC = 100

µA, IB = 0

BSP 50

BSP 51

BSP 52

V(BR)CB0

100

–

Emitter-base cutoff current

VEB = 4 V, IC = 0

IEB0

––10

Base-emitter saturation voltage2)

IC = 500 mA, IB = 0.5 mA

IC = 1 A, IB = 1 mA

VBEsat

–

1.9

2.2

Compare RBE for thermal stability.

Pulse test conditions:

t ≤ 300 µs, D = 2 %.

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