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BSP75 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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BSP75 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
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1 / 9 page ![]() HITFET® BSP 75 Semiconductor Group Page 1 of 9 1998-02-04 Smart Lowside Power Switch Features • Logic Level Input • Input protection (ESD) • Thermal shutdown (with restart) • Overload protection • Short circuit protection • Overvoltage protection • Current limitation Application • All kinds of resistive, inductive and capacitive loads in switching applications • µC compatible power switch for 12 V and 24 V DC applications • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart Power Technology. Fully protected by embedded protection functions. protection Overvoltage Drain IN ESD HITFET ® Source 1 3 Over- protection temperature Short circuit protection + limitation V bb Short circuit protection LOAD 2 dv/dt limitation 4 M Current Pin Symbol Function 1 IN Input 2 DRAIN Output to the load 3 SOURCE Ground TAB SUBSTRATE Must be connected to Pin 3 Product Summary Continuous drain source voltage VDS 55 V On-state resistance RDS(ON) 550 m Ω Current limitation ID(lim) 1A Nominal load current ID(Nom) 0.7 A Clamping energy EAS 550 mJ |
Similar Part No. - BSP75 |
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Similar Description - BSP75 |
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