BSP75 datasheet(3/9 Pages) SIEMENS

3 / 9 page

HITFET® BSP 75

Semiconductor Group

Page 3

1998-02-04

Electrical Characteristics

Parameter and Conditions

Symbol

Values

Unit

at Tj = 25 °C, unless otherwise specified

min

typ

max

Static Characteristics

Drain source clamp voltage

ID = 10 mA

Tj =-40...+150°C:

VDS(AZ)

Off state drain current

VIN = 0 V, VDS = 32 V

Tj =-40...+150°C:

IDSS

µA

Input threshold voltage

ID = 10 mA

VIN(th)

2.5

Input current

normal operation,

ID<ID(lim):

VIN = 5 V

current limitation mode,

ID=ID(lim):

after thermal shutdown,

ID=0 A:

IIN(1)

IIN(2)

IIN(3)

1000

100

200

1500

200

300

2000

µA

On-state resistance

ID = 0.7 A, VIN = 5 V

Tj=25°C:

Tj=150°C:

RDS(on)

550

850

675

1350

Ω

On-state resistance

ID = 0.7 A, VIN = 10 V

Tj=25°C:

Tj=150°C:

RDS(on)

475

750

550

1000

Ω

Nominal load current

VBB = 12 V, VDS = 0.5 V, TS = 85°C

Tj < 150°C

ID(Nom)

0.7

Current limit

VIN = 10 V, VDS = 12 V

ID(lim)

1.5

1.9

Dynamic characteristics

Turn-on time

VIN to 90% ID:

RL = 22

Ω, VIN= 0 to 10 V, Vbb= 12 V

ton

µs

Turn-off time

VIN to 10% I D:

RL = 22

Ω, VIN= 10 to 0 V, Vbb= 12 V

toff

µs

Slew rate on

70 to 50% Vbb:

RL = 22

Ω, VIN = 0 to 10 V, Vbb = 12 V

-d

VDS/dt on

µs

Slew rate off

50 to 70% Vbb:

RL = 22

Ω, VIN= 10 to 0 V, Vbb= 12 V

VDS/dt off

µs

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