LC5525F datasheet(13/40 Pages) SANKEN

13 / 40 page

SANKEN ELECTRIC CO., LTD.

LC5500-AN, Rev.1.2

LC5523F ELECTRICAL CHARACTERISTICS (MOSFET) TA = 25°C, unless otherwise specified

Characteristic

Symbol

Test Conditions

Pins

Min.

Typ.

Max.

Unit

Drain-to-Source Breakdown Voltage1

VDSS

1 – 2

650

――

Drain Leakage Current

IDSS

1 – 2

――

300

μA

On Resistance1

RDS(on)

1 – 2

――

1.9

Switching Time1

1 – 2

――

400

Thermal Resistance1,2

Rθch-F

Between channel and internal frame

―――

3.1

°C/W

Refer to each individual product datasheet for details.

The thermal resistance between the channels of the MOSFET and the case. TC measured at the center of the case top surface.

LC5523F Absolute Maximum Ratings TA = 25°C, unless otherwise specified

Characteristic

Symbol

Notes

Pins

Rating

Unit

Drain Current*

IDPeak

Single pulse

1 – 2

9.2

Single Pulse Avalanche Energy*

EAS

ILPeak = 2.9 A, VDD = 99 V, L = 20 mH

1 – 2

Supply Voltage for Controller Chip

VCC

4 – 2

OCP Pin Voltage

VOCP

5 – 2

−2.0 to 5.0

FB Pin Voltage

VFB

6 – 2

−0.3 to 7.0

OVP Pin Voltage

VOVP

7 – 2

−0.3 to 5.0

Allowable Power Dissipation of

MOSFET*

PD1

With infinite heatsink

1 – 2

20.2

Without heatsink

1 – 2

1.8

Internal Frame Temperature in

Operation

―−20 to 115

°C

Operating Ambient Temperature

TOP

―−55 to 115

°C

Storage Temperature

Tstg

―−55 to 125

°C

Channel Temperature

Tch

―

150

°C

*Refer to each individual product datasheet for details.

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