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MP6M12 Datasheet(PDF) 3 Page - Rohm |
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MP6M12 Datasheet(HTML) 3 Page - Rohm |
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3 / 11 page ![]() www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet MP6M12 Electrical characteristics (Ta = 25 C) <Tr2(Pch)> Symbol Min. Typ. Max. Unit Gate-source leakage IGSS - - ±10 AVGS=±20V, VDS=0V Drain-source breakdown voltage V (BR)DSS 30 - - V ID=1mA, VGS=0V Zero gate voltage drain current IDSS - 1 AVDS=30V, VGS=0V Gate threshold voltage VGS (th) 1.0 - 2.5 V VDS=10V, ID=1mA -40 56 ID=4.5A, VGS=10V -55 77 ID=2.5A, VGS=4.5V -60 84 ID=2.5A, VGS=4.0V Forward transfer admittance l Yfs l 2.5 - - S ID=4.5A, VDS=10V Input capacitance Ciss - 800 - pF VDS=10V Output capacitance Coss - 120 - pF VGS=0V Reverse transfer capacitance Crss - 110 - pF f=1MHz Turn-on delay time td(on) - 10 - ns ID=2.5A, VDD 15V Rise time tr - 25 - ns VGS=10V Turn-off delay time td(off) - 80 - ns RL=6.0 Fall time tf - 65 - ns RG=10 Total gate charge Qg - 8.4 nC ID=4.5A Gate-source charge Qgs - 3.0 - nC VDD 15V Gate-drain charge Qgd - 3.5 - nC VGS=5V *Pulsed Body diode characteristics (Source-Drain) (Ta = 25 C) Symbol Min. Typ. Max. Unit Forward Voltage VSD -- 1.2 V Is=4.5A, VGS=0V *Pulsed Parameter Conditions Conditions m Static drain-source on-state resistance RDS (on) Parameter * * * * * * * * * * * * * * * * * 3/10 2011.10 - Rev.A |
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