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MP6M12 Datasheet(PDF) 1 Page - Rohm |
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MP6M12 Datasheet(HTML) 1 Page - Rohm |
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1 / 11 page ![]() Data Sheet www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4V Drive Nch + Pch MOSFET MP6M12 Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (MPT6). Application Switching Packaging specifications Package Taping Code TCR Basic ordering unit (pieces) 1000 MP6M12 Absolute maximum ratings (Ta = 25 C) Tr1 : N-ch Tr2 : P-ch Drain-source voltage VDSS 30 30 V Gate-source voltage VGSS ±20 ±20 V Continuous ID 5.0 5.0 A Pulsed IDP 12 12 A Continuous Is 1.6 1.6 A Pulsed Isp 12 12 A W / TOTAL W / ELEMENT Channel temperature Tch C Range of storage temperature Tstg C *1 Pw 10s, Duty cycle1% *2 Mounted on a ceramic board. Type Source current (Body Diode) Drain current Parameter Total power dissipation PD Symbol 2.0 55 to 150 Unit Limits 1.4 150 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain ∗ 1 ESD PROTECTION DIODE ∗ 2 BODY DIODE MPT6 (Duel) (1) (2) (3) (6) (5) (4) *1 *1 Dimensions (Unit : mm) Inner circuit ∗2 ∗2 ∗1 ∗1 (1) (2) (3) (6) (5) (4) *2 1/10 2011.10 - Rev.A |
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