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BTS113 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part # BTS113
Description  TEMPFET (N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic)
PDF  9 Pages
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BTS113 Datasheet(HTML) 2 Page - Siemens Semiconductor Group

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Semiconductor Group
2
Electrical Characteristics
at
T
j = 25 °C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS = 0, ID = 0.25 mA
V
(BR)DSS
60
–
–
V
Gate threshold voltage
V
GS = VDS, ID = 1 mA
V
GS(th)
1.6
2.0
2.5
Zero gate voltage drain current
V
GS = 0 V, VDS = 60 V
T
j = 25 °C
T
j = 125 °C
I
DSS
–
–
0.1
10
1.0
100
µA
Gate-source leakage current
V
GS = ± 20 V, VDS = 0
T
j = 25 °C
T
j = 150 °C
I
GSS
–
–
10
2
100
4
nA
µA
Drain-source on-state resistance
V
GS = 4.5 V, ID = 5.8 A
R
DS(on)
–
0.14
0.17
Ω
Dynamic Characteristics
Forward transconductance
V
DS ≥ 2 × ID × RDS(on)max, ID = 5.8 A
g
fs
4.5
7.5
–
S
Input capacitance
V
GS = 0, VDS = 25 V, f = 1 MHz
C
iss
–
420
560
pF
Output capacitance
V
GS = 0, VDS = 25 V, f = 1 MHz
C
oss
–
160
250
Reverse transfer capacitance
V
GS = 0, VDS = 25 V, f = 1 MHz
C
rss
–
60
110
Turn-on time
t
on, (ton = td(on) + tr)
V
CC = 30 V, VGS = 5.0 V, ID = 3.0 A,
R
GS = 50 Ω
t
d(on)
–15
25
ns
t
r
–55
80
Turn-off time
t
off, (toff = td(off) + tf)
V
CC = 30 V, VGS = 5.0 V, ID = 3.0 A,
R
GS = 50 Ω
t
d(off)
–45
60
t
f
–40
55
BTS 113A



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