2N4237 datasheet(1/2 Pages) CENTRAL

Part #	2N4237

Description	NPN SILICON TRANSISTOR

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Manufacturer	CENTRAL [Central Semiconductor Corp]

Direct Link	http://www.centralsemi.com

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2N4237

2N4238

2N4239

NPN SILICON TRANSISTOR

JEDEC TO-39 CASE

Central

Semiconductor Corp.

TM

R1 (22-February 2007)

DESCRIPTION:

The

CENTRAL

SEMICONDUCTOR

2N4237,

2N4238, and 2N4239 are Silicon NPN Transistors,

in a hermetically sealed metal case designed for

power amplifier, power driver and switching power

supply applications.

MAXIMUM RATINGS: (TC=25°C unless otherwise noted)

SYMBOL

2N4237

2N4238

2N4239

UNITS

Collector-Base Voltage

VCBO

50

80

100

V

Collector-Emitter Voltage

VCEO

40

60

80

V

Emitter-Base Voltage

VEBO

6.0

V

Collector Current

IC

3.0

A

Base Current

IB

0.5

A

Power Dissipation

PD

6.0

W

Operating and Storage

TJ,Tstg

-65 to +200

°C

Junction Temperature

Thermal Resistance

Θ

JC

29.2

°C/W

ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB= Rated VCBO

0.1

mA

ICEV

VCE=45V, VEB=1.5V (2N4237)

0.1

mA

ICEV

VCE=75V, VEB=1.5V (2N4238)

0.1

mA

ICEV

VCE=90V, VEB=1.5V (2N4239)

0.1

mA

ICEV

VCE=30V, VEB=1.5V, TC=150°C (2N4237)

1.0

mA

ICEV

VCE=50V, VEB=1.5V, TC=150°C (2N4238)

1.0

mA

ICEV

VCE=70V, VEB=1.5V , TC=150°C (2N4239)

1.0

mA

ICEO

VCE= Rated VCEO

0.7

mA

IEBO

VEB=6.0V

0.5

mA

BVCEO

IC= 100mA (2N4237)

40

V

BVCEO

IC= 100mA (2N4238)

60

V

BVCEO

IC= 100mA (2N4239)

80

V

VCE(SAT)

IC= 500mA, IB=50mA

0.3

V

VCE(SAT)

IC=1.0A, IB=0.1A

0.6

V

VBE(SAT)

IC=1.0A, IB=0.1A

1.5

V

VBE(ON)

VCE=1.0V, IC=250mA

1.0

V

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