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BTS550P Datasheet(PDF) 8 Page - Siemens Semiconductor Group

Part # BTS550P
Description  Smart Highside High Current Power Switch (Overload protection Current limitation Short circuit protection Overtemperature protection)
PDF  15 Pages
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BTS550P Datasheet(HTML) 8 Page - Siemens Semiconductor Group

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Preliminary Data Sheet BTS550P
Semiconductor Group
Page 8
1998-Aug-31
Reverse battery protection
Logic
IS
IN
IS
R
V
R
OUT
L
R
Power GND
Signal GND
Vbb
-
Power
Transistor
IN
R
bb
R
D
S
D
RV ≥ 1 kΩ, RIS = 1 kΩ nominal. Add RIN for reverse
battery protection in applications with Vbb above
16 V16); recommended value:
1
RIN
+
1
RIS
+
1
RV
=
0.1A
|
Vbb| - 12V
if DS is not used (or
1
RIN
=
0.1A
|
Vbb| - 12V
if DS
is used).
To minimize power dissipation at reverse battery
operation, the summarized current into the IN and IS
pin should be about 120mA. The current can be
provided by using a small signal diode D in parallel to
the input switch, by using a MOSFET input switch or
by proper adjusting the current through
RIS and RV.
Vbb disconnect with energized inductive
load
Provide a current path with load current capability by
using a diode, a Z-diode, or a varistor. (
VZL < 72 V or
VZb < 30 V if RIN=0). For higher clamp voltages
currents at IN and IS have to be limited to 250 mA.
Version a:
PROFET
V
IN
OUT
IS
bb
V
bb
V
ZL
Version b:
PROFET
V
IN
OUT
IS
bb
V
bb
V
Zb
Note that there is no reverse battery protection when
using a diode without additional Z-diode VZL, VZb.
Version c: Sometimes a neccessary voltage clamp is
given by non inductive loads RL connected to the
same switch and eliminates the need of clamping
circuit:
PROFET
V
IN
OUT
IS
bb
V
bb
R
L



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