BUZ102 datasheet(1/9 Pages) SIEMENS

Part #	BUZ102

Description	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)

PDF	9 Pages

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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Semiconductor Group

1

07/96

BUZ 102

SIPMOS ® Power Transistor

• N channel

• Enhancement mode

• Avalanche-rated

• d

v/dt rated

• Low on-resistance

• 175°C operating temperature

• also in TO-220 SMD available

Pin 1

Pin 2

Pin 3

G

D

S

Type

VDS

ID

RDS(on)

Package

Ordering Code

BUZ 102

50 V

42 A

0.023

Ω

TO-220 AB

C67078-S1351-A2

Maximum Ratings

Parameter

Symbol

Values

Unit

Continuous drain current

TC = 111 °C

ID

42

A

Pulsed drain current

TC = 25 °C

IDpuls

168

Avalanche energy, single pulse

ID = 42 A, VDD = 25 V, RGS = 25 Ω

L = 102 µH, Tj = 25 °C

EAS

180

mJ

Reverse diode d

v/dt

IS = 42 A, VDS = 40 V, diF/dt = 200 A/µs

Tjmax = 175 °C

d

v/dt

6

kV/µs

Gate source voltage

VGS

± 20

V

Power dissipation

TC = 25 °C

Ptot

200

W

Operating temperature

Tj

-55 ... + 175

°C

Storage temperature

Tstg

-55 ... + 175

Thermal resistance, chip case

RthJC

≤ 0.83

K/W

Thermal resistance, chip to ambient

RthJA

≤ 75

DIN humidity category, DIN 40 040

E

IEC climatic category, DIN IEC 68-1

55 / 175 / 56

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BUZ102 Datasheet(PDF) 1 Page - Siemens Semiconductor Group

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