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SFF740 Datasheet(PDF) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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SFF740 Datasheet(HTML) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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1 / 7 page  S S S SF F F FF F F F74 74 74 740 0 0 0 Rev.A Jun.2011 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. S S S Siiiilllliiiic c c co o o on n n n N N N N----Ch Ch Ch Cha a a an n n nn n n nel el el el M M M MOS OS OS OSF F F FET ET ET ET Features ■ 10A,400V,RDS(on)(Max 0.55Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 60nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology. This latest technology has beenespecially designed to minimize on -state resistance,have a highrugged avalanche characteristics. This devices is specially wellsuited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast. Absolute Maximum Ratings Symbol Parameter Value Units VDSS Drain Source Voltage 400 V ID Continuous Drain Current(@Tc=25℃) 10* A Continuous Drain Current(@Tc=100 ℃) 6.3* A IDM Drain Current Pulsed (Note1) 40* A VGS Gate to Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note2) 450 mJ EAR Repetitive Avalanche Energy (Note1) 13 mJ dv/dt Peak Diode Recovery dv /dt (Note3) 4 V/ ns PD Total Power Dissipation(@Tc=25℃) 44 W Derating Factor above 25 ℃ 0.35 W/ ℃ TJ,Tstg Junction and Storage Temperature -55~150 ℃ TL Maximum lead Temperature for soldering purposes 300 ℃ *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter Value Units Min Typ Max RQJC Thermal Resistance , Junction -to -Case - - 2.86 ℃/W RQJA Thermal Resistance , Junction-to -Ambient - - 62.5 ℃/W |
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