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SFF740 Datasheet(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd

Part # SFF740
Description  Silicon N-Channel MOSFET
PDF  7 Pages
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Manufacturer  WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]
Direct Link  http://www.winsemi.com
Logo WINSEMI - Shenzhen Winsemi Microelectronics Co., Ltd

SFF740 Datasheet(HTML) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd

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S
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SF
F
F
FF
F
F
F74
74
74
740
0
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keep you
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you advance
advance
advance
advance
2/7
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Gate leakage current
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
Gate-source breakdown voltage
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
Drain cut -off current
IDSS
VDS=400V,VGS=0V
-
-
25
µA
Drain -source breakdown voltage
V(BR)DSS
ID=250 µA,VGS=0V
400
-
-
V
Break voltage Temperature
Coefficient
△BVDSS/
△TJ
ID=250µA, Referenced
to 25℃
-
0.4
-
V/℃
Gate threshold voltage
VGS(th)
VDS=10V,ID=250 µA
2
-
4
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=5A
-
0.48
0.55
Ω
Forward Transconductance
gfs
VDS=40V,ID=5A
-
9.6
-
S
Input capacitance
Ciss
VDS=25V,
VGS=0V,
f=1MHz
-
1400
1800
pF
Reverse transfer capacitance
Crss
-
36
46
Output capacitance
Coss
-
150
195
Switching time
Rise time
tr
VDD=200V,
ID=10A，
RG=25Ω，
(Note4,5)
-
20
50
ns
Turn-on time
ton
-
80
170
Fall time
tf
-
125
260
Turn-off
time
toff
-
85
180
Total gate charge(gate-source
plus gate-drain)
Qg
VDD=320V,
VGS=10V,
ID=10A
(Note4,5)
-
60
71
nC
Gate-source charge
Qgs
-
7
-
Gate-drain("miller") Charge
Qgd
-
27
-
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Continuous drain reverse current
IDR
-
-
-
10
A
Pulse drain reverse current
IDRP
-
-
-
40
A
Forward voltage(diode)
VDSF
IDR=10A,VGS=0V
-
1.4
1.5
V
Reverse recovery time
trr
IDR=10A,VGS=0V,
dIDR / dt =100 A / µs
-
330
-
ns
Reverse recovery charge
Qrr
-
3.57
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=7.9mH IAS=10A,VDD=50V,RG=0Ω ,Starting TJ=25
℃
3.ISD≤10A,di/dt≤300A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution



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