Drivers for GaAs FET MMIC Switches and Digital Attenuators

Rev. V3

Application Note

M539

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3

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Additional Notes

1.

To achieve the fastest switching performance,

the GaAs FET MMIC die should be floated at a

potential of +5 V.

2.

sisting of a resistor from the +5 volt supply to a

pair of diodes mounted to ground (see Fig. 2).

3.

The single-channel driver (SWD-109) is avail-

able in an SOIC 8-lead plastic package. The

quad-channel driver (SWD-119) is available in

an SOIC 16-lead plastic package.

4.

The SWD-109 is supplied with two ground pins

(Pin 2 and 7). Only one of the two pins need to

be grounded.

5.

grounded.

Summary

M/A-COM Microelectronics Division has introduced

a silicon CMOS ASIC driver for GaAs FET MMIC

control devices. This driver is designed to operate

with TTL or CMOS input logic levels, without the

need for any external components.

The ASIC

driver requires positive (+5 V) and negative (-5 V to

-8 V) voltages for operation.

A third voltage

(VOPR) can be supplied to improve the low fre-

quency performance of GaAs FET MMIC control

devices.

Figure 2. SWD-109 Single-Channel

Driver and SW-338 GaAs MMIC Switch

TTL Input

C1

A

B

Logic 0

Logic 1

Outputs

Control Inputs

A

B

RF1

RF2

On

Off

Off

On

RF Common to: