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IL221 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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IL221 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
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1 / 3 page ![]() 5–1 FEATURES • High Current Transfer Ratio, IF=1 mA, IL221A, 100% Minimum IL222A, 200% Minimum IL223A, 500% Minimum • Withstand Test Voltage, 2500 VACRMS • Electrical Specifications Similar to Standard 6 Pin Coupler • Industry Standard SOIC-8 Surface Mountable Package • Standard Lead Spacing, .05" • Available in Tape and Reel Option (Conforms to EIA Standard RS481A) • Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering • Underwriters Lab File #E52744 (Code Letter P) DESCRIPTION The IL221A/IL222A/IL223A is a high current trans- fer ratio (CTR) optocoupler with a Gallium Arsenide infrared LED emitter and a silicon NPN photodar- lington transistor detector. This device has a CTR tested at an 1 mA LED cur- rent. This low drive current permits easy interfacing from CMOS to LSTTL or TTL. This optocoupler is constructed in a standard SOIC-8 foot print which makes it ideally suited for high density applications. In addition to eliminating through-holes requirements, this package con- forms to standards for surface mounted devices. Maximum Ratings Emitter Peak Reverse Voltage .....................................6.0 V Continuous Forward Current .........................60 mA Power Dissipation at 25 °C............................90 mW Derate Linearly from 25 °C......................1.2 mW/°C Detector Collector-Emitter Breakdown Voltage...............30 V Emitter-Collector Breakdown Voltage.................5 V Collector-Base Breakdown Voltage..................70 V Power Dissipation ......................................150 mW Derate Linearly from 25 °C......................2.0 mW/°C Package Total Package Dissipation at 25 °C Ambient (LED + Detector) ....................................240 mW Derate Linearly from 25 °C......................3.3 mW/°C Storage Temperature ...................–55 °C to +150°C Operating Temperature ...............–55 °C to +100°C Soldering Time at 260 °C ............................. 10 sec. Characteristics (TA=25°C) Symbol Min. Typ. Max. Unit Condition Emitter Forward Voltage VF 1.0 1.5 V IF=1 mA Reverse Current IR 0.1 100 µAV R=6.0 V Capacitance CO 25 pF VR=0 V, F=1 MHz Detector Breakdown Voltage Collector-Emitter Emitter-Collector BVCEO BVECO 30 5 V V IC=100 µA IE=100 µA Voltage, Collector-Base BVCBO 70 IC=10 µA Capacitance, Collector-Emitter CCE 3.4 pF VCE=10 V Package DC Current Transfer Ratio IL221A IL222A IL223A CTRDC 100 200 300 IF=1 mA, VCE=5 V Saturation Voltage, Collector-Emitter VCEsat 1V ICE=0.5 mA, IF=1 mA Isolation Test Voltage VIO 2500 VACRMS t=1 sec. Capacitance, Input toOutput CIO 0.5 pF Resistance, Input to Output RIO 100 G Ω Dimensions in inches (mm) 1 2 3 4 Anode Cathode NC NC 8 7 6 5 NC Base Collector Emitter 40 ° .240 (6.10) .154 ±.005 (3.91 ±.13) .050 (1.27) typ. .016 (.41) .192 ±.005 (4.88 ±.13) .004 (.10) .008 (.20) Lead Coplanarity ±.0015 (.04) max. .015 ±.002 (.38 ±.05) .008 (.20) 7 ° .058 ±.005 (1.49 ±.13) .125 ±.005 (3.18 ±.13) Pin One ID .120 ±.005 (3.05 ±.13) CL .040 (1.02) 5 ° max. R.010 (.25) max. .020 ±.004 (.15 ±.10) 2 plcs. IL221A/IL222A/IL223A PHOTODARLINGTON SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER This document was created with FrameMaker 4.0.4 |
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