5–1

FEATURES

• Current Transfer Ratio, 50% Typical

• Leakage Current, 1 nA Typ.

• Two Isolated Channels Per Package

• Direct Replacement for MCT6

• Underwriters Lab File #E52744

•

VDE 0884 Available with Option1

DESCRIPTION

The ILCT6 is a two channel opto isolator for high

density applications. Each channel consists of an

optically coupled pair with a gallium arsenide infra-

red LED and a silicon NPN phototransistor. Signal

information, including a DC level, can be transmit-

ted by the device while maintaining a high degree

of electrical isolation between input and output.

The ILCT6 is especially designed for driving

medium-speed logic, where it may be used to elimi-

nate troublesome ground loop and noise problems.

It can also be used to replace relays and transform-

ers in many digital interface applications, as well as

analog applications such as CRT modulation.

Maximum Ratings

Emitter (each channel)

Rated Forward Current, DC...........................60 mA

Peak Forward Current, DC

(1

µs pulse, 300 pps)......................................3 A

Power Dissipation at 25

°C Ambient ...........100 mW

Derate Linearly from 25

°C......................1.3 mW/°C

Detector (each channel)

Collector Current ...........................................30 mA

Collector-Emitter Breakdown Voltage...............30 V

Power Dissipation at 25

°C Ambient ...........150 mW

Derate Linearly from 25

°C.........................2 mW/°C

Package

Isolation Resistance

12

Ω

11

Ω

Creepage ............................................... 7 mm min.

Clearance............................................... 7 mm min.

Total Package Dissipation

at 25

°C Ambient. ...................................400 mW

Derate Linearly from 25

°C....................5.33 mW/°C

Storage Temperature ...................–55

°C to +150°C

Operating Temperature ...............–55

°C to +100°C

Lead Soldering Time at 260

°C ................... 10 sec.

V

DE

Sym-

bol

Min.

Typ.

Max.

Unit

Condition

Emitter

Forward Voltage

1.25

1.50

V

Reverse Current

0.1

10

µAV

Junction

Capacitance

25

pF

Detector

Breakdown Voltage,

Collector-Emitter

Emitter-Collector

30

7.0

65

10

V

V

Leakage Current,

Collector -Emitter

1.0

100

nA

Capacitance

Collector-Emitter

8.0

pF

Package

DC Current

Transfer Ratio

CTR

20

50

%

Saturation Voltage,

Collector-Emitter

0.40

V

Isolation

Capacitance

0.5

pF

f=1.0 MHz

Capacitance

between Channels

0.4

pF

f=1.0 MHz

Bandwidth

150

KHz

Switching Times,

Output Transistor

3.0

µsI

Dimensions in inches (mm)

Pin One I.D.

.268 (6.81)

.255 (6.48)

3

4

6

5

.390 (9.91)

.379 (9.63)

.045 (1.14)

.030 (.76)

4

° Typ.

.100 (2.54) Typ.

10

° Typ.

3

°–9°

.305 Typ.

(7.75) Typ.

.022 (.56)

.018 (.46)

.012 (.30)

.008 (.20)

.135 (3.43)

.115 (2.92)

1

2

8

7

.150 (3.81)

.130 (3.30)

.040 (1.02)

.030 (.76 )

1

2

3

4

8

7

6

5

Emitter

Collector

Collector

Emitter

Anode

Cathode

Cathode

Anode

ILCT6

DUAL PHOTOTRANSISTOR

OPTOCOUPLER