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2SC4793 Datasheet(PDF) 2 Page - Unisonic Technologies

Part # 2SC4793
Description  NPN SILICON TRANSISTOR
PDF  4 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SC4793 Datasheet(HTML) 2 Page - Unisonic Technologies

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2SC4793
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R219-009,B
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
230
V
Collector-Emitter Voltage
VCEO
230
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
1
A
Base Current
IB
0.1
A
Ta=25℃
2.0
W
Collector Power Dissipation
TC=25℃
PC
20
W
Junction Temperature
TJ
+150
℃
Storage Temperature Range
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless others specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Emitter Breakdown Voltage
BVCEO
IC=10mA, IB=0
230
V
Base -Emitter Voltage
VBE
VCE=5V, IC=500mA
1.0
V
Collector-Emitter Saturation Voltage
VCE(SAT) IC=500mA, IB=50mA
1.5
V
Collector Cut-off Current
ICBO
VCB =230V, IE=0
1.0
µA
Emitter Cut-off Current
IEBO
VEB=5V, IC=0
1.0
µA
DC Current Gain
hFE
VCE=5V, IC=100mA
100
320
Transition Frequency
fT
VCE=10V, IC=100mA
100
MHz
Collector Output Capacitance
Cob
VCB=10V, IE=0, f=1MHz
20
pF
CLASSIFICATION OF hFE
RANK
A
B
RANGE
100-200
180-320



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