2SC4793

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R219-009,B

TYPICAL CHARACTERISTICS

0

1.4

0.2

0

-25

Collector Current

0.8

1.0

1.2

0.4

0.6

0.2

0.4

0.6

0.8

1.0

25

Common Emitter

5

30

10

Transition Frequency vs. Collector Current

300

1000

50

100

10

30

100

300

1000

Common Emitter

0.003

30

10

DC Current Gain vs. Collector Current

500

1000

1

50

100

0.01

0.03

0.1

0.3

300

-25

25

Common Emitter

Collector-Emitter Saturation Voltage vs. Collector Current

3

-25

25

Common Emitter

0.5

1

0.3

0.05

0.1

0.03

0.01

0.003

1

0.01

0.03

0.1

0.3

3

Safe Operating Area

10ms※

100ms※

DC Operation

(Continuous)

MAX .

1ms※

※Single Nonrepetitive

be Derated Linearly With

Increase in Temperature.

0.1

0.03

3

5

0.3

0.5

0.01

0.05

1

1

10

100

30

300

3

0

48

0.2

0

6

10

Collector Current vs. Collector-Emitter Voltage

0.8

1.0

2

0.4

20

0.6

8

10

4

6

Common Emitter