4N90G-TN3-R datasheet(2/6 Pages) UTC

2 / 6 page

4N90

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-479.b

ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain to Source Voltage

VDSS

900

Gate to Source Voltage

VGSS

±30

Avalanche Current (Note 2)

IAR

Continuous

Continuous Drain Current

Pulsed (Note 2)

IDM

Single Pulsed (Note 3)

EAS

570

Avalanche Energy

Repetitive (Note 2)

EAR

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

TO-220

140

TO-220F

Power Dissipation(TC=25°C)

TO-252

TO-220

1.12

TO-220F

0.38

Derate above 25°C

TO-252

0.43

W/°C

Operating Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note :

1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L=67mH, IAS=4A, VDD=50V, RG=25Ω, Starting TJ=25°C

4. ISD ≤4A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220

62.5

TO-220F

62.5

Junction to Ambient

TO-252

θJA

110

°C/W

TO-220

0.89

TO-220F

2.66

Junction to Case

TO-252

θJC

2.3

°C/W

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