4N90G-TN3-R datasheet(3/6 Pages) UTC

3 / 6 page

4N90

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-479.b

ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=250µA

900

Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ

ID=250μA,

Referenced to 25°C

1.05

V/°C

VDS=900V, VGS=0V

µA

Drain-Source Leakage Current

IDSS

VDS=720V, TC=125°C

100

µA

Forward

IGSS

VGS=+30V, VDS=0V

+100

Gate- Source Leakage Current

Reverse

IGSS

VGS=-30V, VDS=0V

-100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

3.0

5.0

Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=2A

3.5

4.2

Ω

DYNAMIC PARAMETERS

Input Capacitance

CISS

740

960

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

VDS=25V,VGS=0V,f=1.0MHz

5.6

7.3

SWITCHING PARAMETERS

Total Gate Charge

Gate-Source Charge

QGS

4.5

Gate-Drain Charge

QGD

VDS=720V, VGS=10V, ID=4A

(Note 1,2)

7.5

Turn-ON Delay Time

tD(ON)

Turn-ON Rise Time

110

Turn-OFF Delay Time

tD(OFF)

Turn-OFF Fall Time

VDD=450V, ID=4A, RG=25Ω

(Note 1,2)

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current

ISM

Drain-Source Diode Forward Voltage

VSD

IS =4A, VGS=0V

1.4

Body Diode Reverse Recovery Time

tRR

450

Body Diode Reverse Recovery Charge

QRR

VGS=0V, IS=4A,

dIF/dt=100A/μs (Note 1)

3.5

μC

Note :

1. Pulse Test : Pulse width≤300μs, Duty cycle≤2%

2. Essentially independent of operating temperature

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