6N60Z

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-741.a

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

600

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 2)

6.2

A

Continuous Drain Current

6.2

A

Pulsed Drain Current (Note 2)

24.8

A

Avalanche Energy

Single Pulsed (Note 3)

440

mJ

Repetitive (Note 2)

13

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

ns

Power Dissipation

40

W

Junction Temperature

+150

°C

Operating Temperature

-55 ~ +150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATING

UNIT

Junction to Ambient

62.5

°C/W

Junction to Case

3.2

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

600

V

Drain-Source Leakage Current

10

μA

Gate- Source Leakage Current

Forward

5

μA

Reverse

-5

μA

Breakdown Voltage Temperature Coefficient

BV

△

0.53

V/°C

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-State Resistance

1.0

1.5

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

f=1.0 MHz

770 1000 pF

Output Capacitance

95

120

pF

Reverse Transfer Capacitance

10

13

pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

20

50

ns

Turn-On Rise Time

70

150

ns

Turn-Off Delay Time

40

90

ns

Turn-Off Fall Time

45

100

ns

Total Gate Charge

20

25

nC

Gate-Source Charge

4.9

nC

Gate-Drain Charge

9.4

nC