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8N65 Datasheet(PDF) 3 Page - Unisonic Technologies

Part # 8N65
Description  8A, 650V N-CHANNEL POWER MOSFET
PDF  8 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

8N65 Datasheet(HTML) 3 Page - Unisonic Technologies

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8N65
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 8
www.unisonic.com.tw
QW-R502-591.C
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 μA
650
V
Drain-Source Leakage Current
IDSS
VDS = 650 V, VGS = 0 V
10
µA
Gate-Source Leakage Current
Forward
IGSS
VGS = 30 V, VDS = 0 V
100
nA
Reverse
VGS = -30 V, VDS = 0 V
-100
nA
Breakdown Voltage Temperature Coefficient
BV
△
DSS/△TJ
ID =250μA,Referenced to 25°C
0.7
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250 μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10 V, ID = 4A
1.0
1.4
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS = 25 V, VGS = 0V,
f = 1MHz
965 1255 pF
Output Capacitance
COSS
105 135
pF
Reverse Transfer Capacitance
CRSS
12
16
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
VDD = 325V, ID =8A,
RG = 25Ω
(Note 1, 2)
16.5
45
ns
Turn-On Rise Time
tR
60.5 130
ns
Turn-Off Delay Time
tD(OFF)
81
170
ns
Turn-Off Fall Time
tF
64.5 140
ns
Total Gate Charge
QG
VDS= 520V,ID=8A,
VGS= 10 V (Note 1, 2)
28
36
nC
Gate-Source Charge
QGS
4.5
nC
Gate-Drain Charge
QGD
12
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS =8A
1.4
V
Maximum Continuous Drain-Source Diode
Forward Current
IS
8
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
32
A
Reverse Recovery Time
tRR
VGS = 0 V, IS =8A,
dIF/dt = 100 A/µs (Note 2)
365
ns
Reverse Recovery Charge
QRR
3.4
µC
Notes: 1. Pulse Test: Pulse width ≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature



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