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KSY14 Datasheet(PDF) 2 Page - Siemens Semiconductor Group |
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KSY14 Datasheet(HTML) 2 Page - Siemens Semiconductor Group |
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2 / 3 page ![]() Semiconductor Group 2 KSY 14 Maximum ratings Characteristics ( T A = 25 °C) Parameter Symbol Value Unit Operating temperature T A – 40 …+ 175 °C Storage temperature T stg – 50 …+ 180 °C Supply current I 1 7mA Thermal conductivity soldered, in air G thA G thC ≥ 1.5 ≥ 2.2 mW/K mW/K Nominal supply current I 1N 5mA Open-circuit sensitivity K B0 190 …260 V/AT Open-circuit Hall voltage I 1 = I1N, B = 0.1 T V 20 95 …130 mV Ohmic offset voltage I 1 = I1N, B = 0 T V R0 ≤ ± 20 mV Linearity of Hall voltage B = 0 …0.5 T B = 0 …1 T F L ≤ ± 0.2 ≤ ± 0.7 % % Input resistance B = 0 T R 10 900 …1200 Ω Output resistance B = 0 T R 20 900 …1200 Ω Temperature coefficient of the open-circuit Hall voltage I 1 = I1N, B = 0.1 T TC V20 ∼ – 0.03…– 0.07 %/K Temperature coefficient of the internal resistance B = 0 T TC R10, R20 ∼ 0.1…0.18 %/K Change of offset voltage within the temperature range ∆V R0 1) ≤ 2mV Inductive zero component I 1N =0 A 2 2) 0.16 cm2 Noise figure F ∼ 10 dB 1) AQL: 0.65 2) With time varying induction there exists an inductive voltage Vind between the Hall voltage terminals (supply current I1 = 0): Vind = A2 × dB/dt × 10 -4 with V(V), A 2 (cm 2), B(T), t(s) |
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