UT75N03

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-327.C

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Continuous Drain Current

75

A

Pulsed Drain Current (Note 2)

225

A

Single Pulsed Avalanche Current (Note 3)

100

A

Single Pulsed Avalanche Energy (Note 3)

228

mJ

TO-220

75

TO-251

89

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +175

°C

Note: 1.

2.

3.

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220

62.5

Junction to Ambient

TO-251

110

°C/W

TO-220

2.0

Junction to Case

TO-251

1.4

°C/W