UT75N03

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 3

www.unisonic.com.tw

QW-R502-327.C

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

30

V

Drain-Source Leakage Current

1

µA

Forward

100

nA

Gate-Source Leakage Current

Reverse

-100

nA

ON CHARACTERISTICS (

Note)

Gate Threshold Voltage

1

3

V

5

7

mΩ

Static Drain-Source On-Resistance

7

10

mΩ

DYNAMIC PARAMETERS

Input Capacitance

3298

pF

Output Capacitance

1400

pF

Reverse Transfer Capacitance

287

pF

SWITCHING PARAMETERS

Turn-ON Delay Time

20

38

ns

Turn-ON Rise Time

12

23

ns

Turn-OFF Delay Time

113

198

ns

Turn-OFF Fall-Time

40

78

ns

Total Gate Charge

48

55

nC

Gate-Source Charge

10

nC

Gate-Drain Charge

27

nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Diode Forward Voltage(Note)

1.5

V

Maximum Body-Diode Continuous Current

75

A

Note: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

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presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.