UTF1404 datasheet(3/6 Pages) UTC

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UTF1404

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-679.a

ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=250µA

Drain-Source Leakage Current

IDSS

VDS=40V, VGS=0V

µA

VDS=32V, VGS=0V, TJ=150°C

250

µA

Gate- Source Leakage Current

Forward

IGSS

VGS=+20V

+200 nA

Reverse

VGS=-20V

-200 nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

2.0

4.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=95A (Note 2)

3.5

mΩ

DYNAMIC PARAMETERS

Input Capacitance

CISS

VGS=0V, VDS=25V, f=1.0MHz

7360

Output Capacitance

COSS

1680

Reverse Transfer Capacitance

CRSS

240

SWITCHING PARAMETERS

Total Gate Charge

ID=95A, VDS=32V, VGS=10V

(Note 2)

160

200

Gate to Source Charge

QGS

Gate to Drain Charge

QGD

Turn-ON Delay Time

tD(ON)

VDD=20V, ID=95A, RG=2.5Ω,

RD=0.21Ω (Note 2)

Rise Time

140

Turn-OFF Delay Time

tD(OFF)

Fall-Time

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

(Note 3)

162

Maximum Body-Diode Pulsed Current

ISM

(Note 1)

650

Drain-Source Diode Forward Voltage

VSD

IS=95A, VGS=0V, TJ=25°C (Note 2)

1.3

Notes: 1. Repetitive rating: pulse width limited by maximum junction temperature

2. Pulse width≤300µs, Duty cycle≤2%

3. Calculated continuous current based on maximum allowable junction temperature. Package limitation

current is 75A

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