UTT60P03

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-605.a

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage (Note 2)

-30

V

Gate-Source Voltage

±20

V

Continuous

-60

A

Drain Current

Pulsed (Note 2)

240

A

Power Dissipation

45

W

Derate Above 25°C

0.36

W/°C

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive rating: Pulse width limited by maximum junction temperature

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

110

°C/W

Junction to Case

2.73

°C/W