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UTT150N06 Datasheet(PDF) 2 Page - Unisonic Technologies |
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UTT150N06 Datasheet(HTML) 2 Page - Unisonic Technologies |
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2 / 6 page ![]() UTT150N06 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw VER.a ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Peak Diode Recovery dv/dt (Note 3) dv/dt 7.0 V/ns Continuous (TC=25°C, Silicion Limited) ID 150 A Drain Current Pulsed (Note 1) IDM 600 A Single Pulsed Avalanche Energy (Note 2) EAS 872 mJ TC=25°C 231 Power Dissipation Derate above 25°C PD 1.54 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case θJC 0.94 °C/W |
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