ADF4196BCPZ datasheet(5/28 Pages) AD

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Data Sheet

ADF4196

Rev. B | Page 5 of 28

ABSOLUTE MAXIMUM RATINGS

TA = 25°C, unless otherwise noted.

Table 3.

Parameter

Rating

AVDD to Ground

−0.3 V to +3.6 V

AVDD to DVDD1, DVDD2, DVDD3, SDVDD

−0.3 V to +0.3 V

VP1, VP2, VP3 to Ground

−0.3 V to +5.8 V

VP1, VP2, VP3 to AVDD

−0.3 V to +5.8 V

Digital I/O Voltage to Ground

−0.3 V to VDD + 0.3 V

Analog I/O Voltage to Ground

−0.3 V to VP1, VP2, VP3 + 0.3 V

REFIN, RFIN+, RFIN− to Ground

−0.3 V to VDD + 0.3 V

Operating Temperature Range

Industrial

−40°C to +85°C

Storage Temperature Range

−65°C to +125°C

Maximum Junction Temperature

150°C

Reflow Soldering

Peak Temperature

260°C

Time at Peak Temperature

40 sec

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

This device is a high performance RF integrated circuit with

an ESD rating of <2 kV, and it is ESD sensitive. Take proper

precautions for handling and assembly.

THERMAL RESISTANCE

θJA is specified for the worst-case conditions, that is, a device

soldered in a circuit board for surface-mount packages.

Table 4. Thermal Resistance

Package Type

θJA

Unit

32-Lead LFCSP (Paddle Soldered)

27.3

°C/W

TRANSISTOR COUNT

This device includes 75,800 metal oxide semiconductors (MOS)

and 545 bipolar junction transistors (BJT).

ESD CAUTION

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