SEMICONDUCTOR

RoHS

RoHS

Page 2 of 3

MAJOR RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise noted)

A

PARAMETER

V

V

SYMBOL

MTP200

UNIT

1900

08

900

1100

1300

1800

800

1000

1200

1600

18

12

10

16

1700

1800

800

1000

1200

1600

V

Maximum repetitive peak reverse voltage

Peak reverse non-repetitive voltage

Maximum DC blocking voltage

Maximum average forward rectified output current

Peak forward surge current single sine-wave superimposed on

rated load

Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)

for fusing

RMS isolation voltage from case to leads

Operating junction storage temperature range

2

I t

2500

22100

200

2100

2

A s

A

A

V

ºC

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

A

PARAMETER

V

µA

SYMBOL

MTP200

UNIT

08

18

12

10

16

Maximum instantaneous forward drop per diode

Maximum reverse DC current at rated DC blocking

15

1.35

20

voltage per diod

TEST

CONDITIONS

F

A

A

THERMAL AND MECHANICAC (T = 25°C unless otherwise noted)

A

PARAMETER

°C/W

SYMBOL

MTP200

UNIT

08

18

12

10

16

Typical thermal resistance

(1) With heatsink, single side heat dissipation, half sine wave.

(1)

0.10

(2) M5 screw.

Notes

Storage temperature range

ºC

TEST CONDITIONS

junction to case

Single-side heat dissipation, sine

half wave

Mounting

± 10 %

to heatsink M5

A mounting compound is recommended

and the torque should be rechecked after

a

for the spread

period of 3 hours to allow

of the compound.

4

Nm

to terminal M5

4

Approximate weight

320

torque

g

-

Module type: ”MTP” for 3Ø Brıdge

1

2

3

-

RRM

Device code

200

16

3

MTP

-

Voltage code:code x 100 = V

I

rating:"200" for 200 A

F(AV)

mA

2

1

MTP200