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SP0610 Datasheet(PDF) 2 Page - Siemens Semiconductor Group |
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SP0610 Datasheet(HTML) 2 Page - Siemens Semiconductor Group |
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2 / 6 page ![]() SP 0610L Electrical Characteristics at T j = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V GS = 0, ID = 0.25 mA V (BR)DSS − 60 – – V Gate threshold voltage V GS = VDS, ID = 1 mA V GS(th) − 1.0 − 1.5 − 2.0 Zero gate voltage drain current V DS = − 60 V, VGS = 0 T j = 25 ˚C I DSS – − 0.1 − 1 µA Gate-source leakage current V GS = − 20 V, VDS = 0 I GSS – − 1 − 10 nA Drain-source on-resistance V GS = − 10 V, ID = − 0.5 A R DS(on) –710 Ω Dynamic Characteristics Forward transconductance V DS ≥ 2 × ID × RDS(on)max, ID = − 0.5 A g fs 0.08 0.13 – S Input capacitance V GS = 0, VDS = − 25 V, f = 1 MHz C iiss –30 40 pF Output capacitance V GS = 0, VDS = − 25 V, f = 1 MHz C oss –17 25 Reverse transfer capacitance V GS = 0, VDS = − 25 V, f = 1 MHz C rss –812 Turn-on time t on, (ton = td(on) + tr) V DD = − 30 V, VGS = −10 V, RGS =50 Ω, I D = − 0.27 A t d(on) – 7 10 ns t r –12 18 Turn-off time t off, (toff = td(off) + tf) V DD = − 30 V, VGS = −10 V, RGS =50 Ω, I D = − 0.27 A t d(off) –10 13 t f –20 27 |
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