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EDE5108AHSE Datasheet(PDF) 13 Page - Elpida Memory

Part # EDE5108AHSE
Description  512M bits DDR2 SDRAM
PDF  81 Pages
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Manufacturer  ELPIDA [Elpida Memory]
Direct Link  http://www.elpida.com/en
Logo ELPIDA - Elpida Memory

EDE5108AHSE Datasheet(HTML) 13 Page - Elpida Memory

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EDE5108AHSE, EDE5116AHSE
Preliminary Data Sheet E0908E40 (Ver. 4.0)
13
AC Characteristics (TC = 0°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V, VSS, VSSQ = 0V) [DDR2-800, 667]
• New units tCK(avg) and nCK, are introduced in DDR2-800 and DDR2-667
tCK(avg): actual tCK(avg) of the input clock under operation.
nCK: one clock cycle of the input clock, counting the actual clock edges.
-8E, -8G
-6E
Frequency (Mbps)
800
667
Parameter
Symbol
min.
max.
min.
max.
Unit
Notes
/CAS latency
CL
5 (-8E)
6 (-8G)
5 (-8E)
6 (-8G)
5
5
nCK
Active to read or write command delay
tRCD
12.5 (-8E)
15 (-8G)
⎯
15
⎯
ns
Precharge command period
tRP
12.5 (-8E)
15 (-8G)
⎯
15
⎯
ns
Active to active/auto-refresh command time tRC
57.5(-8E)
60 (-8G)
⎯
60
⎯
ns
DQ output access time from CK, /CK
tAC
−400
+400
−450
+450
ps
10
DQS output access time from CK, /CK
tDQSCK
−350
+350
−400
+400
ps
10
CK high-level width
tCH (avg)
0.48
0.52
0.48
0.52
tCK (avg) 13
CK low-level width
tCL(avg)
0.48
0.52
0.48
0.52
tCK (avg) 13
CK half period
tHP
Min. (tCL(abs),
tCH(abs))
⎯
Min.
(tCL(abs),
tCH(abs))
⎯
ps
6, 13
Clock cycle time
tCK (avg)
2500
8000
3000
8000
ps
13
DQ and DM input hold time
tDH (base) 125
⎯
175
⎯
ps
5
DQ and DM input setup time
tDS (base) 50
⎯
100
⎯
ps
4
Control and Address input pulse width for
each input
tIPW
0.6
⎯
0.6
⎯
tCK (avg)
DQ and DM input pulse width for each input tDIPW
0.35
⎯
0.35
⎯
tCK (avg)
Data-out high-impedance time from CK,/CK tHZ
⎯
tAC max.
⎯
tAC max. ps
10
DQS, /DQS low-impedance time from
CK,/CK
tLZ (DQS) tAC min.
tAC max. tAC min.
tAC max. ps
10
DQ low-impedance time from CK,/CK
tLZ (DQ)
2
× tAC min.
tAC max. 2
× tAC min.
tAC max. ps
10
DQS-DQ skew for DQS and associated DQ
signals
tDQSQ
⎯
200
⎯
240
ps
DQ hold skew factor
tQHS
⎯
300
⎯
340
ps
7
DQ/DQS output hold time from DQS
tQH
tHP – tQHS
⎯
tHP – tQHS
⎯
ps
8
DQS latching rising transitions to associated
clock edges
tDQSS
−0.25
+0.25
−0.25
+0.25
tCK (avg)
DQS input high pulse width
tDQSH
0.35
⎯
0.35
⎯
tCK (avg)
DQS input low pulse width
tDQSL
0.35
⎯
0.35
⎯
tCK (avg)
DQS falling edge to CK setup time
tDSS
0.2
⎯
0.2
⎯
tCK (avg)
DQS falling edge hold time from CK
tDSH
0.2
⎯
0.2
⎯
tCK (avg)
Mode register set command cycle time
tMRD
2
⎯
2
⎯
nCK
Write postamble
tWPST
0.4
0.6
0.4
0.6
tCK (avg)
Write preamble
tWPRE
0.35
⎯
0.35
⎯
tCK (avg)
Address and control input hold time
tIH (base) 250
⎯
275
⎯
ps
5
Address and control input setup time
tIS (base) 175
⎯
200
⎯
ps
4
Read preamble
tRPRE
0.9
1.1
0.9
1.1
tCK (avg) 11
Read postamble
tRPST
0.4
0.6
0.4
0.6
tCK (avg) 12
Active to precharge command
tRAS
45
70000
45
70000
ns



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