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EDE5108AHSE Datasheet(PDF) 13 Page - Elpida Memory |
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EDE5108AHSE Datasheet(HTML) 13 Page - Elpida Memory |
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13 / 81 page ![]() EDE5108AHSE, EDE5116AHSE Preliminary Data Sheet E0908E40 (Ver. 4.0) 13 AC Characteristics (TC = 0°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V, VSS, VSSQ = 0V) [DDR2-800, 667] • New units tCK(avg) and nCK, are introduced in DDR2-800 and DDR2-667 tCK(avg): actual tCK(avg) of the input clock under operation. nCK: one clock cycle of the input clock, counting the actual clock edges. -8E, -8G -6E Frequency (Mbps) 800 667 Parameter Symbol min. max. min. max. Unit Notes /CAS latency CL 5 (-8E) 6 (-8G) 5 (-8E) 6 (-8G) 5 5 nCK Active to read or write command delay tRCD 12.5 (-8E) 15 (-8G) ⎯ 15 ⎯ ns Precharge command period tRP 12.5 (-8E) 15 (-8G) ⎯ 15 ⎯ ns Active to active/auto-refresh command time tRC 57.5(-8E) 60 (-8G) ⎯ 60 ⎯ ns DQ output access time from CK, /CK tAC −400 +400 −450 +450 ps 10 DQS output access time from CK, /CK tDQSCK −350 +350 −400 +400 ps 10 CK high-level width tCH (avg) 0.48 0.52 0.48 0.52 tCK (avg) 13 CK low-level width tCL(avg) 0.48 0.52 0.48 0.52 tCK (avg) 13 CK half period tHP Min. (tCL(abs), tCH(abs)) ⎯ Min. (tCL(abs), tCH(abs)) ⎯ ps 6, 13 Clock cycle time tCK (avg) 2500 8000 3000 8000 ps 13 DQ and DM input hold time tDH (base) 125 ⎯ 175 ⎯ ps 5 DQ and DM input setup time tDS (base) 50 ⎯ 100 ⎯ ps 4 Control and Address input pulse width for each input tIPW 0.6 ⎯ 0.6 ⎯ tCK (avg) DQ and DM input pulse width for each input tDIPW 0.35 ⎯ 0.35 ⎯ tCK (avg) Data-out high-impedance time from CK,/CK tHZ ⎯ tAC max. ⎯ tAC max. ps 10 DQS, /DQS low-impedance time from CK,/CK tLZ (DQS) tAC min. tAC max. tAC min. tAC max. ps 10 DQ low-impedance time from CK,/CK tLZ (DQ) 2 × tAC min. tAC max. 2 × tAC min. tAC max. ps 10 DQS-DQ skew for DQS and associated DQ signals tDQSQ ⎯ 200 ⎯ 240 ps DQ hold skew factor tQHS ⎯ 300 ⎯ 340 ps 7 DQ/DQS output hold time from DQS tQH tHP – tQHS ⎯ tHP – tQHS ⎯ ps 8 DQS latching rising transitions to associated clock edges tDQSS −0.25 +0.25 −0.25 +0.25 tCK (avg) DQS input high pulse width tDQSH 0.35 ⎯ 0.35 ⎯ tCK (avg) DQS input low pulse width tDQSL 0.35 ⎯ 0.35 ⎯ tCK (avg) DQS falling edge to CK setup time tDSS 0.2 ⎯ 0.2 ⎯ tCK (avg) DQS falling edge hold time from CK tDSH 0.2 ⎯ 0.2 ⎯ tCK (avg) Mode register set command cycle time tMRD 2 ⎯ 2 ⎯ nCK Write postamble tWPST 0.4 0.6 0.4 0.6 tCK (avg) Write preamble tWPRE 0.35 ⎯ 0.35 ⎯ tCK (avg) Address and control input hold time tIH (base) 250 ⎯ 275 ⎯ ps 5 Address and control input setup time tIS (base) 175 ⎯ 200 ⎯ ps 4 Read preamble tRPRE 0.9 1.1 0.9 1.1 tCK (avg) 11 Read postamble tRPST 0.4 0.6 0.4 0.6 tCK (avg) 12 Active to precharge command tRAS 45 70000 45 70000 ns |
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