TLE5216 datasheet(8/17 Pages) SIEMENS

8 / 17 page

TLE 5216 G

Semiconductor Group

1998-06-22

Electrical Characteristics

S = 6 V to 18 V; Tj = – 40 °C to 150 °C (unless otherwise specified)

Parameter

Symbol

Limit Values

Unit

min.

typ.

max.

Power Supply (

Supply current

Outputs ON

Outputs OFF

3.5

Power Outputs

ON state resistance

j =25 °C; ID = 2 A; all VDS > 0 V

j = 125 °C; ID = 1.5 A; t > 100 µs

DS(ON)

0.35

0.55

0.4

0.63

Ω

Clamping voltage (OUT1 - OUT4)

D = 1 A; 0 < Tj < 125 °C; all VDS > 0 V VDS(AZ)

Negative clamping voltage

j =25 °C; ID = – 0.3 A VDS(AZ)

– 1

– 0.5 V

Current limitation

j =0 °C; VDS = VDS (OV)

j =25 °C; VDS = VDS (OV)

j = 125 °C; VDS = VDS (OV)

D(lim)

3.0

2.8

2.25

3.6

3.3

2.6

4.2

3.8

2.95

Leakage current

S = 0 V; VDS = 12 V; all VDS > 0 V IR

0.2

0.5

Digital Inputs

Inputs IN1 … IN4, CS, SERIN

Input LOW current

0 V <

IN < 2 V IINL

– 200 – 100 – 50

µA

Input HIGH current

IN = 5 V IINH

–20

µA

Input hysteresis

INHys

0.5

0.6

Input Clock (CLK)

Input current

0 V <

INCLK < 5 V IINCLK

–20

µA

Input hysteresis

INCLKHys

0.5

0.7

TLE5216 Datasheet(PDF) 8 Page - Siemens Semiconductor Group

TLE5216 Datasheet(HTML) 8 Page - Siemens Semiconductor Group

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17

Datasheet Download

Link URL