DMN2300UFD

Datasheet Number: DS35443 Rev. 2 - 2

3 of 7

www.diodes.com

September 2011

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A Product Line of

Diodes Incorporated

DMN2300UFD

0.00001

0.0001

0.001

0.01

0.1

1

10

100

1,000

t1, PULSE DURATION TIMES (sec)

Fig. 3 Transient Thermal Resistance

0.000001

0.001

0.01

0.1

1

R

(t) = r(t) * R

θθ

JA

JA

R

= 136°C/W

Duty Cycle, D = t1/ t2

θJA

D = 0.7

D = 0.5

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

20

-

-

V

-

-

1

μA

Gate-Source Leakage

-

-

±10

μA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

0.45

-

0.95

V

Static Drain-Source On-Resistance

-

-

200

m

Ω

260

400

500

Forward Transfer Admittance

40

-

-

mS

Diode Forward Voltage

-

0.7

1.2

V

DYNAMIC CHARACTERISTICS

Input Capacitance

-

67.62

-

pF

f = 1.0MHz

Output Capacitance

-

9.74

-

pF

Reverse Transfer Capacitance

-

7.58

-

pF

Gate Resistance

-

68.51

-

Ω

Total Gate Charge (Note 8)

-

0.89

2

nC

Gate-Source Charge

-

0.14

-

nC

Gate-Drain Charge

-

0.16

-

nC

Turn-On Delay Time

-

4.92

-

ns

Turn-On Rise Time

-

6.93

-

ns

Turn-Off Delay Time

-

21.71

-

ns

Turn-Off Fall Time

-

10.62

-

ns

Notes:

7. Short duration pulse test used to minimize self-heating effect.

8. Guarantee by design.