INA223

SBOS528 – JUNE 2012

www.ti.com

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

PACKAGE

PACKAGE

PRODUCT

PACKAGE-LEAD

DESIGNATOR

MARKING

INA223

SON-10

DSK

P223

(1)

For the most current package and ordering information, see the Package Option Addendum located at the end of this data sheet, or visit

the device product folder at www.ti.com.

ABSOLUTE MAXIMUM RATINGS

(1)

Over operating free-air temperature range, unless otherwise noted.

INA223

UNIT

Supply voltage

+6

V

–26 to +26

V

Analog inputs,

(2)

(GND – 0.3) to +26

V

5

mA

Operating temperature

–55 to +150

°C

Storage temperature

–65 to +150

°C

Junction temperature

+150

°C

Human body model (HBM)

2500

V

Electrostatic

discharge

Charged-device model (CDM)

1000

V

(ESD)ratings

Machine model (MM)

200

V

(1)

Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may

degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond

those specified is not implied.

(2)

(3)

Input voltage at any pin may exceed the voltage shown if the current at that pin is limited to 5 mA.

2

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Product Folder Link(s): INA223